Analysis Of 3C-Sic Double Implanted MOSFET With Gaussian Profile Doping In The Drift Region For High Breakdown Voltage
نویسندگان
چکیده
The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration N0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration N0 = 10 16 cm at drain end and m as 1.496 × 10cm, highest breakdown voltage of 6.84kV has been estimated with device height of 200μm.
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